? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c17a i dm t c = 25 c, pulse width limited by t jm 68 a i ar t c = 25 c17a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g to-247 ad (ixfh) g = gate d = drain s = source tab = drain (tab) ds99058a(06/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 800 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.60 ? pulse test, t 300 s, duty cycle d 2 % ixfh 17n80q ixft 17n80q v dss = 800 v i d25 = 17 a r ds(on) = 0.60 ? ? ? ? ? t rr 250 ns preliminary data sheet to-268 (d3) (ixft) case style (tab) g s hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g features z ixys advanced low q g process z international standard packages z low r ds (on) z unclamped inductive switching (uis) rated z fast switching z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfh 17n80q ixft 17n80q symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 9 17 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 350 pf c rss 100 pf t d(on) 18 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 ns t d(off) r g = 1.5 ? (external) 53 ns t f 16 ns q g(on) 95 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 nc q gd 40 nc r thjc 0.31 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 15 a i sm repetitive; 60 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s -di/dt = 100 a/ s, v r = 100 v 0.85 c i rm 8a dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-268 outline min recommended footprint
? 2003 ixys all rights reserved ixfh 17n80q ixft 17n80q fig. 2. extended output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125 deg. c 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 v d s - volts i d - amperes v gs = 10v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 2 4 6 8 10 12 14 16 18 024681012 v d s - volts i d - amperes v gs = 10v 5v 6v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 17a i d = 8.5a v gs = 10v fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 0 5 10 15 20 25 30 35 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfh 17n80q ixft 17n80q fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 2 4 6 8 10 0 2040 6080100 q g - nanocoulombs v g s - volts v ds = 400v i d = 8.5a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 3 3.5 4 4.5 5 5.5 6 v g s - volts i d - amperes t j = 120oc 25oc -40oc fig. 12. maxim um transient therm al resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 10 20 30 40 50 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc
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